World’s First DDR5 DRAM Released by SK Hynix - Ingenious e-Brain

World’s First DDR5 DRAM Released by SK Hynix

SK Hynix Inc has announced the introduction of the first DDR5 DRAM globally, a high-speed and high-density system designed as the next generation DRAM norm for the use of Big Data, Artificial Intelligence and Machine Learning (ML).
SK Hynix Inc. is the world’s leading provider of semiconductors offering DRAM, NAND, and CMOS image sensor systems (“CIS”) for many distinguished customers worldwide. The DRAM chips are flash memory chips for all levels and are used by a broad spectrum of different customers.
In November 2018, SK Hynix announced that the World’s First 16 Gigabit (Gb) DDR5 DRAM’s development. The company supplied sample products to its major partners, including Intel, and has carried out various testing and usability checks.

The Collaboration of Sk Hynix With Various Partners for the Development of DDR5 DRAM

For the validation of the DDR5 features, SK Hynix carried out a joint on-site laboratory activity, system-level tests and simulation with manufacturers of System-on-Chip (SoC).
It has also validated its DDR5 compatibility, including Registry Clock Drivers (RCD), which affect DRAM performance, and Power Management Integrated System (PMIC), for its major components on the DRAM panel.
SK Hynix cooperated closely with its global collaborators through these validations.

  • Intel collaborated closely with memory leaders like SK Hynix to develop the DDR5 spec, beginning with early concept design through JEDEC standardization.
  • Furthermore, Intel collaborated closely with SK Hynix to build and evaluate prototypes for silicon design to ensure that DDR5 reaches its predictions and is available for our reciprocal customers.
  • Synopsys, Renesas, Montage Technology, and Rambus have shared their contribution to ongoing collaboration in developing the DDR5 ecosystem.
  • Synopsys has partnered with SK Hynix to provide efficient DDR5 solutions for sophisticated computer systems needing exceptionally fast and high-capacity memory subsystems.
  • With multiple SK Hynix DDR5 RDIMM with up to 6400 Mbps, Synopsys silicone proved design software had been validated to reduce the designer’s danger and satisfy its high-performance data-intensive SoCs specifications.
  • Renesas collaborated very closely with SK Hynix to qualify a full DDR5 product range for cloud, user and embedded markets
    As a leading provider for several generations of DDR, Montage Technology partner with SK Hynix and commits to deliver high-performance, low-power memory interface solutions.

Specifications of DDR5

  • DDR5 from SK Hynix offers 4,800 ~5,600 megabits per second (Mbps) transfer rate that is 1.8 times faster than the previous DDR4 generation.
  • One can broadcast nine full HD (FHD) movies per second (5 GB each) at a rate of 5,600Mbps.
  • Its operating voltage is 1.1V down from 1.2V of DDR4, thereby reducing power demand by 20%.
  • Error Correction Code (ECC) in the chip that even 1-bit errors alone can be corrected.
  • The ECC improves apps’ functionality by 20 times.
  • The DDR5 business also can build up to 256 gigabytes (GB) of silicon-via (TSV) technology.

Potential Impact on the Market and to the Customers

  • With the introduction of the World’s First DDR5 DRAM, SK Hynix could lead the future technological trend in the world market for DRAM.
  • SK Hynix concentrates on the fast-growing premium server market and reinforces its position as a pioneer in DRAM servers.
  • The company aims to minimize both power usage and operating expenses in data centers by using these green semiconductor memories, provided that DDR5 consumes less power and greatly increases its efficiency.
  • JEDEC (JEDEC Solid State Technology Association) released the DDR5 specification earlier in July 2020. The DDR5 demand will continue to rise in 2021, according to business intelligence provider Omdia, with 10% of global business for DRAM being retained in 2022 and rising to 43% by 2024.
  • DDR5 DRAM responds to the call with higher data speeds and new technologies that improve memory efficiency significantly.

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